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Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD

Autor
Puigdollers, J.; Voz, C.; Orpella, A.; Martin, I.; Soler, D.; Fonrodona, M.; Bertomeu, J.; Andreu Batallé, Jordi; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of non-crystalline solids
Data de publicació
2002-04
Volum
299-302
Pàgina inicial
400
Pàgina final
404
DOI
https://doi.org/10.1016/S0022-3093(01)01015-8 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112947 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0022309301010158 Obrir en finestra nova
Resum
Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as i...
Citació
Puigdollers, J., Voz, C., Orpella, A., Martin, I., Soler, D., Fonrodona, M., Bertomeu, J., Andreu Batallé, Jordi, Alcubilla, R. Electronic transport in low temperarture nanocrystalline silicon thin-film transistors obtained by hot-wire CVD. "Journal of non-crystalline solids", Abril 2002, vol. 299-302, p. 400-404.
Paraules clau
C185, E255, N100, S180, T190
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants