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Thin-film transistors with polymorphous silicon active layer

Autor
Voz, C.; Puigdollers, J.; Orpella, A.; Alcubilla, R.; Fontcuberta i Morral, A.; Tripathi, V.; Roca, P.
Tipus d'activitat
Article en revista
Revista
Journal of non-crystalline solids
Data de publicació
2002-04
Volum
299-302
Pàgina inicial
1345
Pàgina final
1350
DOI
https://doi.org/10.1016/S0022-3093(01)01099-7 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/112874 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0022309301010997 Obrir en finestra nova
Resum
Hydrogenated silicon thin films were obtained by plasma enhanced chemical vapour deposition under plasma conditions close to the formation of powder. By that means microcrystalline, polymorphous and amorphous silicon layers could be obtained depending on the process pressure. The films were deposited on patterned and thermally oxidised n-type silicon wafers to produce bottom-gate thin-film transistors (TFT). The electrical characteristics of the devices showed an improvement in the field-effect ...
Citació
Voz, C., Puigdollers, J., Orpella, A., Alcubilla, R., Fontcuberta i Morral, A., Tripathi, V., Roca, P. Thin-film transistors with polymorphous silicon active layer. "Journal of non-crystalline solids", Abril 2002, vol. 299-302, p. 1345-1350.
Paraules clau
C185, S180, T190, T310
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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