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Surface passivation of n-type crystalline Si by plasma-enhanced-chemical-vapor-deposited SiCx:H and amorphous SiCxNy:H films

Autor
Martin, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Applied physics letters
Data de publicació
2002-12
Volum
81
Número
23
Pàgina inicial
4461
Pàgina final
4463
DOI
https://doi.org/10.1063/1.1527230 Obrir en finestra nova
URL
http://aip.scitation.org/doi/10.1063/1.1527230 Obrir en finestra nova
Resum
Excellent passivation of n-type crystalline silicon surface is demonstrated by means of intrinsic amorphous silicon carbide (a-SiCx:H) thin films. An optimum CH4/SiH4 ratio is determined, leading to an effective surface recombination velocity, Seff, lower than 54 cm¿s-1. By adding a constant flow of N2 to the precursor gases, the surface passivation is improved to Seff¿16¿cm¿s-1. From infrared spectroscopy measurements of these films, it can be deduced that the N2 flow increases the carbon c...
Paraules clau
Amorphous semiconductors, Carbon, Charge carriers, Silicon, Surface passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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