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Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

Autor
Voz, C.; Martin, I.; Orpella, A.; Puigdollers, J.; Vetter, M.; Alcubilla, R.; Soler, D.; Fonrodona, M.; Bertomeu, J.; Andreu Batallé, Jordi
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2003-05
Volum
430
Número
1-2
Pàgina inicial
270
Pàgina final
273
DOI
https://doi.org/10.1016/S0040-6090(03)00130-5 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/113058 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609003001305 Obrir en finestra nova
Resum
In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed eff...
Citació
Voz, C., Martin, I., Orpella, A., Puigdollers, J., Vetter, M., Alcubilla, R., Soler, D., Fonrodona, M., Bertomeu, J., Andreu Batallé, J. Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films. "Thin solid films", Maig 2003, vol. 430, núm. 1-2, p. 270-273.
Paraules clau
Catalytic CVD, Heterostructures, Passivation, Solar cells
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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