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Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

Autor
Martin, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.; Cabarrocas, R.
Tipus d'activitat
Article en revista
Revista
Applied physics letters
Data de publicació
2004-03
Volum
84
Número
9
Pàgina inicial
1474
Pàgina final
1476
DOI
https://doi.org/10.1063/1.1647702 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/2440 Obrir en finestra nova
URL
http://aip.scitation.org/doi/abs/10.1063/1.1647702 Obrir en finestra nova
Resum
A completely dry low-temperature process has been developed to passivate 3.3 O¿cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H) deposition, without breaking the vacuum. We measured effective lifetime, teff, through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation...
Citació
Martín, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; Roca, P. Improvement of crystalline silicon surface passivation by hidrogen plasma treatment. A: Applied Physics Letters, 2004, v. 89, p. 1474-1746.
Paraules clau
Plasma deposition, Plasma materials processing, Silicon, Surface passivation, Wide bandgap semiconductors
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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