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IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation

Autor
Vetter, M.; Martin, I.; Orpella, A.; Puigdollers, J.; Voz, C.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2004-03
Volum
451-452
Pàgina inicial
340
Pàgina final
344
DOI
https://doi.org/10.1016/j.tsf.2003.10.125 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/113069 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609003015244 Obrir en finestra nova
Resum
Amorphous intrinsic silicon carbide (a-SiCx:H(i)) films and amorphous silicon carbonitride (SiCxNy:H) films have been deposited by plasma enhanced chemical vapor deposition from CH4/SiH4/(N2) plasma on n-type (1.5 O cm) crystalline silicon (c-Si). These films have evidenced excellent surface passivation properties with a best result for the surface recombination velocity Seff˜2–3 cm s-1 for amorphous SiCxNy:H films, which is the lowest reported value for n-type c-Si with resistivity of 1.5 O ...
Citació
Vetter, M., Martin, I., Orpella, A., Puigdollers, J., Voz, C., Alcubilla, R. IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation. "Thin solid films", Març 2004, vol. 451-452, p. 340-344.
Paraules clau
Crystalline silicon, Passivation, Silicon carbide, Silicon carbonitride, Solar cell
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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