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Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization

Author
Puigdollers, J.; Voz, C.; Martin, I.; Orpella, A.; Vetter, M.; Alcubilla, R.
Type of activity
Journal article
Journal
Journal of non-crystalline solids
Date of publication
2004-06
Volume
338-340
First page
617
Last page
621
DOI
https://doi.org/10.1016/j.jnoncrysol.2004.03.054 Open in new window
Repository
http://hdl.handle.net/2117/113072 Open in new window
URL
https://www.sciencedirect.com/science/article/pii/S0022309304002236 Open in new window
Abstract
Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device performance. Crystalline silicon wafers and polyethylenenaphtalate polymer foils were used as substrates. Pentacene thin-films were deposited by thermal evaporation in a high-vacuum system. The maximum process temperature was 170 °C, corresponding to the baking of polymethyl methac...
Citation
Puigdollers, J., Voz, C., Martin, I., Orpella, A., Vetter, M., Alcubilla, R. Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization. "Journal of non-crystalline solids", Juny 2004, vol. 338-340, p. 617-621.
Keywords
D180, F100, T110
Group of research
MNT - Micro and Nanotechnologies Research Group

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