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Pentacene thin-film transistors with polymeric gate dielectric

Autor
Puigdollers, J.; Voz, C.; Orpella, A.; Quidant, Romain; Martin, I.; Vetter, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Organic electronics
Data de publicació
2004-06
Volum
5
Número
1-3
Pàgina inicial
67
Pàgina final
71
DOI
https://doi.org/10.1016/j.orgel.2003.10.002 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/113071 Obrir en finestra nova
URL
http://www.sciencedirect.com/science/article/pii/S1566119903000636 Obrir en finestra nova
Resum
Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These devices presented good electrical performances with field-effect mobilities of 0.01 cm2 V-1 s-1 and low threshold voltages (-15 V). Atomic force microscopy studies reveal that the microstructure of pentacene layers is strongly conditioned by the surface morphology of the dielectr...
Citació
Puigdollers, J., Voz, C., Orpella, A., Quidant, Romain, Martin, I., Vetter, M., Alcubilla, R. Pentacene thin-film transistors with polymeric gate dielectric. "Organic electronics", Juny 2004, vol. 5, núm. 1-3, p. 67-71.
Paraules clau
PMMA, Pentacene, Thin-film transistors
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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