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Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface

Author
Ferre, R.; Martin, I.; Vetter, M.; Garin, M.; Alcubilla, R.
Type of activity
Journal article
Journal
Applied physics letters
Date of publication
2005-11
Volume
87
Number
20
First page
1
Last page
3
DOI
https://doi.org/10.1063/1.2130530 Open in new window
Repository
http://hdl.handle.net/2117/2439 Open in new window
URL
http://scitation.aip.org/content/aip/journal/apl/87/20/10.1063/1.2130530 Open in new window
Abstract
Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer thickness on the c-Si surface passivation quality resulting in the determination of the fixed charge density, Qf, within the a-SiCx(n):H film and the fundamental recombination of holes, Sp0. The main result is that surface recombination velocity decreases with film thickness up to 4...
Citation
Ferre, R.; Martín, I.; Vetter, M.; Garín, M.; Alcubilla, R. Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface. A: Applied Physics Letters, 2005, VOL. 87, 202109.
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants