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Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface

Autor
Ferre, R.; Martin, I.; Vetter, M.; Garin, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Applied physics letters
Data de publicació
2005-11
Volum
87
Número
20
Pàgina inicial
1
Pàgina final
3
DOI
https://doi.org/10.1063/1.2130530 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/2439 Obrir en finestra nova
URL
http://scitation.aip.org/content/aip/journal/apl/87/20/10.1063/1.2130530 Obrir en finestra nova
Resum
Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer thickness on the c-Si surface passivation quality resulting in the determination of the fixed charge density, Qf, within the a-SiCx(n):H film and the fundamental recombination of holes, Sp0. The main result is that surface recombination velocity decreases with film thickness up to 4...
Citació
Ferre, R.; Martín, I.; Vetter, M.; Garín, M.; Alcubilla, R. Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface. A: Applied Physics Letters, 2005, VOL. 87, 202109.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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