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Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition

Author
Martin, I.; Vetter, M.; Garin, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.
Type of activity
Journal article
Journal
Journal of applied physics
Date of publication
2005-12
Volume
98
Number
11
First page
114192
DOI
https://doi.org/10.1063/1.2140867 Open in new window
Repository
http://hdl.handle.net/2117/117799 Open in new window
URL
http://scitation.aip.org/content/aip/journal/jap/98/11/10.1063/1.2140867 Open in new window
Abstract
Surface-passivating properties of hydrogenated amorphous silicon carbide films(a-SiCx:H)(a-SiCx:H)deposited by plasma-enhanced chemical-vapor deposition on both pp- and nn-type crystalline silicon(c-Si)(c-Si) have been extensively studied by our research group in previous publications. We characterized surface recombination by measuring the dependence of the effective lifetime (teff)(teff) on excess carrier density(¿n)(¿n) through quasi-steady-state photoconductance technique. Additionally, we...
Citation
Martin, I., Vetter, M., Garin, M., Orpella, A., Voz, C., Puigdollers, J., Alcubilla, R. Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition. "Journal of applied physics", Desembre 2005, vol. 98, núm. 11.
Keywords
Lifetime, Surface passivation, Thin films
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants