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Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements

Autor
Garin, M.; Rau, U.; Bredle, W.; Martin, I.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of applied physics
Data de publicació
2005-11
Volum
98
Pàgina inicial
093711
DOI
https://doi.org/10.1063/1.2128047 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117798 Obrir en finestra nova
URL
http://scitation.aip.org/content/aip/journal/jap/98/9/10.1063/1.2128047 Obrir en finestra nova
Resum
This article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a physical model to calculate the interface recombination rate under illumination. This model calculates the effective lifetime teff as a function of the average excess minority carrier concentration¿¿n¿. In order to test the model, we prepared a set of HIT structures. The dependen...
Citació
Garin, M., Rau, U., Bredle, W., Martin, I., Alcubilla, R. Characterization of a-Si:H/c-Si interfaces by effective-lifetime measurements. "Journal of applied physics", Novembre 2005, vol. 98.
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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