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Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV

Autor
Voz, C.; Muñoz, D.; Fonrodona, M.; Martin, I.; Puigdollers, J.; Alcubilla, R.; Escarré, J.; Bertomeu, J.; Andreu Batallé, Jordi
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2006-07
Volum
511-512
Pàgina inicial
415
Pàgina final
419
DOI
https://doi.org/10.1016/j.tsf.2005.11.099 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117877 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609005023187 Obrir en finestra nova
Resum
Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined with thin intrinsic amorphous silicon buffers. Such heterojunction with intrinsic thin layer concept is applied to obtain both the low temperature deposited emitter and back surface field contact. Especially remarkable is the performance of the solar cell fabricated on p-type c-Si...
Citació
Voz, C., Muñoz, D., Fonrodona, M., Martin, I., Puigdollers, J., Alcubilla, R., Escarré, J., Bertomeu, J., Andreu Batallé, J. Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV. "Thin solid films", Juliol 2006, vol. 511-512, p. 415-419.
Paraules clau
Heterojunction, Hot-Wire CVD, Silicon, Solar cell
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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