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Electronic properties of intrinsic and doped amorphous silicon carbide films

Autor
Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu Batallé, Jordi; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2006-07
Volum
511-512
Pàgina inicial
290
Pàgina final
294
DOI
https://doi.org/10.1016/j.tsf.2005.11.108 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117876 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609005023229 Obrir en finestra nova
Resum
Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms- 1 is possible up to 6¿ diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of...
Citació
Vetter, M., Voz, C., Ferre, R., Martin, I., Orpella, A., Puigdollers, J., Andreu Batallé, Jordi, Alcubilla, R. Electronic properties of intrinsic and doped amorphous silicon carbide films. "Thin solid films", Juliol 2006, vol. 511-512, p. 290-294.
Paraules clau
Amorphous silicon carbide, Conductivity, Meyer–Neldel, Passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants