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Electronic properties of intrinsic and doped amorphous silicon carbide films

Author
Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu Batallé, Jordi; Alcubilla, R.
Type of activity
Journal article
Journal
Thin solid films
Date of publication
2006-07
Volume
511-512
First page
290
Last page
294
DOI
https://doi.org/10.1016/j.tsf.2005.11.108 Open in new window
Repository
http://hdl.handle.net/2117/117876 Open in new window
URL
https://www.sciencedirect.com/science/article/pii/S0040609005023229 Open in new window
Abstract
Hydrogenated amorphous silicon carbide (a-SiCx : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms- 1 is possible up to 6¿ diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of...
Citation
Vetter, M., Voz, C., Ferre, R., Martin, I., Orpella, A., Puigdollers, J., Andreu Batallé, Jordi, Alcubilla, R. Electronic properties of intrinsic and doped amorphous silicon carbide films. "Thin solid films", Juliol 2006, vol. 511-512, p. 290-294.
Keywords
Amorphous silicon carbide, Conductivity, Meyer–Neldel, Passivation
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants