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Copper phthalocyanine thin filma transistors with polymeric gate dielectric

Autor
Puigdollers, J.; Voz, C.; Fonrodona, M.; Cheylan, S.; Stella, M.; Andreu Batallé, Jordi; Vetter, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of non-crystalline solids
Data de publicació
2006-06
Volum
352
Número
9-20
Pàgina inicial
1778
Pàgina final
1782
DOI
https://doi.org/10.1016/j.jnoncrysol.2005.10.063 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117870 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0022309306002079 Obrir en finestra nova
Resum
Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films were deposited by thermal evaporation in a high vacuum system. The maximum process temperature achieved was 100 °C, corresponding to the baking of the PMMA. The devices showed satisfactory p-type electrical characteristics with field-effect mobility and threshold voltage v...
Citació
Puigdollers, J., Voz, C., Fonrodona, M., Cheylan, S., Stella, M., Andreu Batallé, Jordi, Vetter, M., Alcubilla, R. Copper phthalocyanine thin filma transistors with polymeric gate dielectric. "Journal of non-crystalline solids", Juny 2006, vol. 352, núm. 9-20, p. 1778-1782.
Paraules clau
Polymers and organics, Thin film transistors
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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