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Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy

Autor
Garcia-Belmonte, G.; García-Cañadas, J.; Mora-Seró, I.; Bisquert, J.; Voz, C.; Puigdollers, J.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2006-07
Volum
514
Número
1-2
Pàgina inicial
254
Pàgina final
257
DOI
https://doi.org/10.1016/j.tsf.2006.02.020 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117871 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S004060900600263X Obrir en finestra nova
Resum
By combining information on solar cell layer structure and electrical response analyzed by impedance spectroscopy, relevant knowledge is obtained about photogenerated carriers recombination and extraction. The inclusion of a-Si:H buffer layers on the response of bifacial heterojunction silicon solar cells prepared by hot-wire chemical vapor deposition is studied. Impedance analysis indicates that the effect of the buffer layer is twofold: (a) effective minority carrier lifetime is improved by on...
Citació
Garcia-Belmonte, G., García-Cañadas, J., Mora-Seró, I., Bisquert, J., Voz, C., Puigdollers, J., Alcubilla, R. Effect of buffer layer on minority carrier lifetime and series resistance of bifacial heterojunction silicon solar cells analyzed by impedance spectroscopy. "Thin solid films", Juliol 2006, vol. 514, núm. 1-2, p. 254-257.
Paraules clau
Buffer layer, Carrier lifetime, Chemical vapor deposition, Impedance spectroscopy, Solar cell
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants