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N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers

Autor
Ferre, R.; Martin, I.; Ortega, P.; Vetter, M.; Torres, I.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of applied physics
Data de publicació
2006-10
Volum
100
Número
7
Pàgina inicial
1
Pàgina final
7
DOI
https://doi.org/10.1063/1.2354323 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117880 Obrir en finestra nova
URL
https://aip.scitation.org/doi/10.1063/1.2354323 Obrir en finestra nova
Resum
Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20–500O/sq). Phosphorus diffusions were performed using solid planar diffusion sources without employing any drive-in step. Stacks of two SiCx layers were deposited by plasma enhanced chemical vapor deposition: first a thin silicon rich layer with excellent passivating properties and then an antirefl...
Citació
Ferre, R., Martin, I., Ortega, P., Vetter, M., Torres, I., Alcubilla, R. N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers. "Journal of applied physics", Octubre 2006, vol. 100, núm. 7, p. 1-7.
Paraules clau
Carbides, Current density, Diffusion, Doping, Optical constants, Passivation, Plasma chemical vapor deposition, Public address systems, Silicon, Surface passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants