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Crystalline silicon surface passivation by amorphous silicon carbide films

Autor
Vetter, M.; Martin, I.; Ferre, R.; Garin, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Solar energy materials and solar cells
Data de publicació
2006-10
Volum
91
Número
2-3
Pàgina inicial
174
Pàgina final
179
DOI
https://doi.org/10.1016/j.solmat.2006.08.004 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117879 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0927024806003497 Obrir en finestra nova
Resum
This article reviews the surface passivation of n- and p-type crystalline silicon by hydrogenated amorphous silicon carbide films, which provide surface recombination velocities in the range of 10 cm s-1. Films are deposited by plasma-enhanced chemical vapor deposition from a silane/methane plasma. We determine the passivation quality measuring the injection level (¿n)-dependent lifetime (teff(¿n)) by the quasi-steady-state photoconductance technique. We analyze the experimental teff(¿n)-curv...
Citació
Vetter, M., Martin, I., Ferre, R., Garin, M., Alcubilla, R. Crystalline silicon surface passivation by amorphous silicon carbide films. "Solar energy materials and solar cells", Octubre 2006, vol. 91, núm. 2-3, p. 174-179.
Paraules clau
Amorphous silicon carbide, Crystalline silicon, Lifetime, Passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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