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Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures

Autor
Torres, I.; Vetter, M.; Ferré-Borrull, J; Marsal, L.; Orpella, A.; Alcubilla, R.; Pallarès, J.
Tipus d'activitat
Article en revista
Revista
Physica E. Low-dimensional systems and nanostructures
Data de publicació
2007-04
Volum
38
Número
1-2
Pàgina inicial
36
Pàgina final
39
DOI
https://doi.org/10.1016/j.physe.2006.12.025 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117882 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S1386947706006072 Obrir en finestra nova
Resum
In this work, we study the changes in the optical properties of 300-nm-thick hydrogenated amorphous silicon carbide layers after an annealing process. Both intrinsic and phosphorus-doped amorphous silicon carbide layers (a-SiCx:H) were deposited on silicon wafers by plasma enhanced chemical vapour deposition (PECVD) at 400 °C and annealed in a quartz furnace at 800 °C. The presence of randomly oriented silicon nanocrystals was confirmed by X-ray diffraction (XRD) measurements after the partial...
Citació
Torres, I., Vetter, M., Ferré-Borrull, J, Marsal, L., Orpella, A., Alcubilla, R., Pallarès, J. Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures. "Physica E. Low-dimensional systems and nanostructures", Abril 2007, vol. 38, núm. 1-2, p. 36-39.
Paraules clau
Annealing, Fourier transform infrared spectra, Optical properties X-ray diffraction, Silicon nanocrystals, Silicon-carbon alloys
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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