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Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements

Author
Garin, M.; Martin, I.; Bermejo, S.; Alcubilla, R.
Type of activity
Journal article
Journal
Journal of applied physics
Date of publication
2007-06
Volume
101
First page
123716
Last page
123716-7
DOI
https://doi.org/10.1063/1.2748355 Open in new window
Repository
http://hdl.handle.net/2117/2445 Open in new window
URL
http://scitation.aip.org/content/aip/journal/jap/101/12/10.1063/1.2748355 Open in new window
Abstract
Depletion region modulation (DRM) effect is often observed in photoconductance lifetime measurements of crystalline silicon wafers passivated by dielectric films. This effect is closely related to the space-charge region electrostatically induced by fixed charges within the dielectric. This study proposes a model for dielectric-passivated c-Si wafers, which includes the DRM effect, to simulate and fit the effective lifetime vs excess minority carrier density curves obtained by quasisteady-state ...
Citation
Garín, M.; Mrtín, I.; Bermejo, S.; Alcubilla, R. Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements. A: Journal of Applied Phyics, 2007, vol. 101, 123716.
Keywords
Crystalline silicon, Dielectric thin films, Lifetime, Space charge effects, Surface passivation
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants