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Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements

Autor
Garin, M.; Martin, I.; Bermejo, S.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Journal of applied physics
Data de publicació
2007-06
Volum
101
Pàgina inicial
123716
Pàgina final
123716-7
DOI
https://doi.org/10.1063/1.2748355 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/2445 Obrir en finestra nova
URL
http://scitation.aip.org/content/aip/journal/jap/101/12/10.1063/1.2748355 Obrir en finestra nova
Resum
Depletion region modulation (DRM) effect is often observed in photoconductance lifetime measurements of crystalline silicon wafers passivated by dielectric films. This effect is closely related to the space-charge region electrostatically induced by fixed charges within the dielectric. This study proposes a model for dielectric-passivated c-Si wafers, which includes the DRM effect, to simulate and fit the effective lifetime vs excess minority carrier density curves obtained by quasisteady-state ...
Citació
Garín, M.; Mrtín, I.; Bermejo, S.; Alcubilla, R. Fixed charge density in dielectrics deposited on c-Si using space charge region dominated lifetime measurements. A: Journal of Applied Phyics, 2007, vol. 101, 123716.
Paraules clau
Crystalline silicon, Dielectric thin films, Lifetime, Space charge effects, Surface passivation
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies