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Fullerene thin-film transistors fabricated on polymeric gate dielectric

Autor
Puigdollers, J.; Voz, C.; Cheylan, S.; Orpella, A.; Vetter, M.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2007-07
Volum
515
Número
19
Pàgina inicial
7667
Pàgina final
7670
DOI
https://doi.org/10.1016/j.tsf.2006.11.085 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117956 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609006014118 Obrir en finestra nova
Resum
Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection...
Citació
Puigdollers, J., Voz, C., Cheylan, S., Orpella, A., Vetter, M., Alcubilla, R. Fullerene thin-film transistors fabricated on polymeric gate dielectric. "Thin solid films", Juliol 2007, vol. 515, núm. 19, p. 7667-7670.
Paraules clau
Electronic devices, Organic semiconductors
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants