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Photodiodes based on fullerene semiconductor

Autor
Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, A.; Stella, M.; Andreu Batallé, Jordi; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2007-07
Volum
515
Número
9
Pàgina inicial
7675
Pàgina final
7678
DOI
https://doi.org/10.1016/j.tsf.2006.11.160 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/117954 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609006014581 Obrir en finestra nova
Resum
Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium–tin-oxide coated glass substrates were also fabr...
Citació
Voz, C., Puigdollers, J., Cheylan, S., Fonrodona, A., Stella, M., Andreu Batallé, Jordi, Alcubilla, R. Photodiodes based on fullerene semiconductor. "Thin solid films", Juliol 2007, vol. 515, núm. 9, p. 7675-7678.
Paraules clau
Fullerene, Optoelectronic devices, Organic semiconductors, Work function
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants