Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C

Autor
Muñoz, D.; Voz, C.; Martin, I.; Orpella, A.; Puigdollers, J.; Alcubilla, R.; Villar, F.; Bertomeu, J.; Andreu Batallé, Jordi; Damon-Lacoste, J.; Cabarrocas, R.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2008-01
Volum
516
Número
5
Pàgina inicial
761
Pàgina final
764
DOI
https://doi.org/10.1016/j.tsf.2007.06.192 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/118022 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609007009777 Obrir en finestra nova
Resum
In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV–visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Stead...
Citació
Muñoz, D., Voz, C., Martin, I., Orpella, A., Puigdollers, J., Alcubilla, R., Villar, F., Bertomeu, J., Andreu Batallé, Jordi, Damon-Lacoste, J., Cabarrocas, R. Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C. "Thin solid films", Gener 2008, vol. 516, núm. 5, p. 761-764.
Paraules clau
Heterostructure, Hot-wire deposition, Solar cell
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants