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Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

Author
Ferre, R.; Orpella, A.; Muñoz, D.; Martin, I.; Recart, F.; Voz, C.; Puigdollers, J.; Cabarrocas, R.; Alcubilla, R.
Type of activity
Journal article
Journal
Progress in photovoltaics
Date of publication
2008-03
Volume
16
Number
2
First page
123
Last page
127
DOI
https://doi.org/10.1002/pip.802 Open in new window
Repository
http://hdl.handle.net/2117/118025 Open in new window
URL
https://onlinelibrary.wiley.com/doi/abs/10.1002/pip.802 Open in new window
Abstract
Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3¿cm¿s-1 and 2¿cm¿s-1 on 1¿O¿cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we incre...
Citation
Ferre, R., Orpella, A., Muñoz, D., Martin, I., Recart, F., Voz, C., Puigdollers, J., Cabarrocas, R., Alcubilla, R. Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys. "Progress in photovoltaics", Març 2008, vol. 16, núm. 2, p. 123-127.
Keywords
Amorphous silicon, Antireflective, Crystalline solar cells, Passivation, Phosphorus doped, Silicon carbide, Thermal stress
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants