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Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

Autor
Ferre, R.; Orpella, A.; Muñoz, D.; Martin, I.; Recart, F.; Voz, C.; Puigdollers, J.; Cabarrocas, R.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Progress in photovoltaics
Data de publicació
2008-03
Volum
16
Número
2
Pàgina inicial
123
Pàgina final
127
DOI
https://doi.org/10.1002/pip.802 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/118025 Obrir en finestra nova
URL
https://onlinelibrary.wiley.com/doi/abs/10.1002/pip.802 Obrir en finestra nova
Resum
Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3¿cm¿s-1 and 2¿cm¿s-1 on 1¿O¿cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we incre...
Citació
Ferre, R., Orpella, A., Muñoz, D., Martin, I., Recart, F., Voz, C., Puigdollers, J., Cabarrocas, R., Alcubilla, R. Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys. "Progress in photovoltaics", Març 2008, vol. 16, núm. 2, p. 123-127.
Paraules clau
Amorphous silicon, Antireflective, Crystalline solar cells, Passivation, Phosphorus doped, Silicon carbide, Thermal stress
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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