Carregant...
Carregant...

Vés al contingut (premeu Retorn)

Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells

Autor
Muñoz, D.; Voz, C.; Martin, I.; Orpella, A.; Alcubilla, R.; Villar, F.; Bertomeu, J.; Andreu Batallé, Jordi; Roca-I-Cabarrocas, P.
Tipus d'activitat
Article en revista
Revista
Thin solid films
Data de publicació
2008-08
Volum
516
Número
20
Pàgina inicial
6782
Pàgina final
6785
DOI
https://doi.org/10.1016/j.tsf.2007.12.020 Obrir en finestra nova
Repositori
http://hdl.handle.net/2117/118030 Obrir en finestra nova
URL
https://www.sciencedirect.com/science/article/pii/S0040609007020160?via%3Dihub Obrir en finestra nova
Resum
The growing interest in using thinner wafers (< 200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD. The influence of the deposition parameters and the use of an intrinsic buffer layer have been considered. The microstructure of the deposited thin films has been comprehensively studie...
Citació
Muñoz, D., Voz, C., Martin, I., Orpella, A., Alcubilla, R., Villar, F., Bertomeu, J., Andreu Batallé, Jordi, Roca-I-Cabarrocas, P. Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells. "Thin solid films", Agost 2008, vol. 516, núm. 20, p. 6782-6785.
Paraules clau
Ellipsometry, Heterostructure, Hot-wire deposition, Passivation, Solar cell
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

Participants

Arxius