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Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells

Author
Muñoz, D.; Voz, C.; Martin, I.; Orpella, A.; Alcubilla, R.; Villar, F.; Bertomeu, J.; Andreu Batallé, Jordi; Roca-I-Cabarrocas, P.
Type of activity
Journal article
Journal
Thin solid films
Date of publication
2008-08
Volume
516
Number
20
First page
6782
Last page
6785
DOI
https://doi.org/10.1016/j.tsf.2007.12.020 Open in new window
Repository
http://hdl.handle.net/2117/118030 Open in new window
URL
https://www.sciencedirect.com/science/article/pii/S0040609007020160?via%3Dihub Open in new window
Abstract
The growing interest in using thinner wafers (< 200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD. The influence of the deposition parameters and the use of an intrinsic buffer layer have been considered. The microstructure of the deposited thin films has been comprehensively studie...
Citation
Muñoz, D., Voz, C., Martin, I., Orpella, A., Alcubilla, R., Villar, F., Bertomeu, J., Andreu Batallé, Jordi, Roca-I-Cabarrocas, P. Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells. "Thin solid films", Agost 2008, vol. 516, núm. 20, p. 6782-6785.
Keywords
Ellipsometry, Heterostructure, Hot-wire deposition, Passivation, Solar cell
Group of research
MNT - Micro and Nanotechnologies Research Group

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