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Characterization and application of a-SiCx:H films for the passivation of the c-Si surface

Author
Martin, I.; Vetter, M.; Orpella, A.; Puigdollers, J.; Voz, C.; Marsal, L.; Pallarès, J.; Alcubilla, R.
Type of activity
Journal article
Journal
Thin solid films
Date of publication
2002-01
Volume
403-404
First page
476
Last page
479
DOI
https://doi.org/10.1016/S0040-6090(01)01648-0 Open in new window
Repository
http://hdl.handle.net/2117/112873 Open in new window
URL
http://www.sciencedirect.com/science/article/pii/S0040609001016480 Open in new window
Abstract
In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicati...
Citation
Martin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R. Characterization and application of a-SiCx:H films for the passivation of the c-Si surface. "Thin solid films", Gener 2002, vol. 403-404, p. 476-479.
Keywords
Amorphous semiconductors, Solar cells, Surface passivation
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants