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Very low recombination phosphorus emitters for high efficiency crystalline silicon solar cells

Autor
Ortega, P.; Vetter, M.; Bermejo, S.; Alcubilla, R.
Tipus d'activitat
Article en revista
Revista
Semiconductor science and technology
Data de publicació
2008-12
Volum
23
Número
12
Pàgina inicial
1
Pàgina final
4
DOI
https://doi.org/10.1088/0268-1242/23/12/125032 Obrir en finestra nova
URL
http://iopscience.iop.org/article/10.1088/0268-1242/23/12/125032 Obrir en finestra nova
Resum
This work studies low recombination phosphorus emitters on c-Si. The emitters are fabricated by diffusion from solid sources and then passivated by thermal oxide yielding sheet resistances between 15 and 280 O/sq. Emitter saturation current densities lie in the 2.5–110 fA cm-2 range, leading to implicit open-circuit voltages between 674 and 725 mV. Bulk lifetime is limited by intrinsic recombination mechanisms. Surface recombination velocities between 80 and 300 cm s-1 have been obtained, appe...
Grup de recerca
MNT - Grup de Recerca en Micro i Nanotecnologies

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