With continued technology scaling, process variations will be especially detrimental to six-transistor static memory structures (6T SRAMs). A memory architecture using three-transistor, one-diode DRAM (3T1D) cells in the L1 data cache tolerates wide process variations with little performance degradation, making it a promising choice for on-chip cache structures for next-generation microprocessors.
Liang, X., Canal, R., Wei, G.-Y. Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability. "IEEE micro", Febrer 2008, vol. 28, núm. 1, p. 60-68.