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A comparative variability analysis for CMOS and CNFET 6T SRAM cells

Author
Garcia, C.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
2011 IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS)
Date of publication
2011
Presentation's date
2011-08
Book of congress proceedings
International Midwest Symposium on Circuits and Systems (MWSCAS)
First page
1
Last page
4
DOI
https://doi.org/10.1109/MWSCAS.2011.6026572 Open in new window
Repository
http://hdl.handle.net/2117/14292 Open in new window
URL
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6026572&tag=1 Open in new window
Abstract
Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the con...
Citation
García, C.; Rubio, J. A comparative variability analysis for CMOS and CNFET 6T SRAM cells. A: IEEE International Midwest Symposium on Circuits and Systems. "International Midwest Symposium on Circuits and Systems (MWSCAS)". 2011, p. 1-4.
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants