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Carbon nanotube growth process-related variablity in CNFET's

Author
Garcia, C.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
11th IEEE International Conference on Nanotechnology
Date of publication
2011
Presentation's date
2011-08-17
Book of congress proceedings
Proceedings of the 11th IEEE Conference on Nanotechnology
First page
1084
Last page
1087
Publisher
IEEE Press. Institute of Electrical and Electronics Engineers
Repository
http://hdl.handle.net/2117/14489 Open in new window
Abstract
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. Novel nanoscale beyond- CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and their potential capability to be a promising alternative to Si-CMOS technology.
Citation
García, C.; Rubio, J. Carbon nanotube growth process-related variablity in CNFET's. A: IEEE conference in Nanotechnology. "Proceedings IEEE NANO 2011". Portland: IEEE Press. Institute of Electrical and Electronics Engineers, 2011, p. 1084-1087.
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants