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Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario

Author
Garcia, C.; Rubio, A.
Type of activity
Presentation of work at congresses
Name of edition
14th IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems
Date of publication
2011
Presentation's date
2011-04-14
Book of congress proceedings
Proceedings IEEE Design and Diagnosis of Electronic Circuits and Systems
First page
249
Last page
254
DOI
https://doi.org/10.1109/DDECS.2011.5783088 Open in new window
Repository
http://hdl.handle.net/2117/14490 Open in new window
URL
http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=5783088&openedRefinements%3D*%26filter%3DAND%28NOT%284283010803%29%29%26searchField%3DSearch+All%26queryText%3DManufacturing+variability+analysis+in+carbon+nanotube+technology%3A+a+comparison+with+bulk+CMOS+in+6T+SRAM+scenario Open in new window
Abstract
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and its potential capability to be a promising alternative to Si-CMOS technology. The impact of the carbon nanotube diameter variations as well ...
Citation
García, C.; Rubio, J. Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario. A: IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems. "Proceedings IEEE Design and Diagnosis of Electronic Circuits and Systems". Cottbus: 2011, p. 249-254.
Group of research
HIPICS - High Performance Integrated Circuits and Systems

Participants