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Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

Author
Moreno, C.; Pfattner, R.; Mas Torrent, Marta; Puigdollers, J.; Bromley, S.; Rovira, C.; Alcubilla, R.; Veciana, J.
Type of activity
Journal article
Journal
Journal of materials chemistry B
Date of publication
2011-11-16
Volume
22
First page
345
Last page
348
DOI
https://doi.org/10.1039/C1JM15037E Open in new window
Repository
http://hdl.handle.net/2117/14665 Open in new window
URL
https://pubs.rsc.org/en/content/articlelanding/2012/jm/c1jm15037e/unauth#!divAbstract Open in new window
Abstract
Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon. Theoretical and experimental investigations combining in situKelvin prob...
Citation
Moreno, C. [et al.]. Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor. "Journal of Material Chemistry", 16 Novembre 2011, vol. 22, p. 345-348.
Group of research
MNT - Micro and Nanotechnologies Research Group

Participants