TY  - MGZN
AU  - Heredia, J.
AU  - Ribó Pal, Miquel
AU  - Pradell, L.
AU  - Wipf, S.
AU  - Göritz, A.
AU  - Wipf, C.
AU  - Kaynak, M.
T2  - IEEE microwave and wireless components letters
Y1  - 2019
VL  - 29
IS  - 5
SP  - 339
EP  - 341
DO  - 10.1109/LMWC.2019.2906595
UR  - https://ieeexplore.ieee.org/document/8681076
AB  - In this letter, a 125-143-GHz frequency-reconfigurable BiCMOS compact low-noise amplifier (LNA) is presented for the first time. It consists of two cascode stages and was fabricated using a 0.13-µm SiGe:C BiCMOS process, which integrates RF-MEMS switches. A systematic general design procedure to obtain a balanced gain and noise figure in both frequency states is proposed. The LNA size is minimized by using only one RF-MEMS switch to select the frequency band and a multimodal three-line microstrip structure in the input matching network. The measured gain and noise figure are 18.2/16.1 and 7/7.7 dB at 125/143 GHz. The power consumption is 36.8 mW. The measured results are in good agreement with simulations.
AB  - © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
TI  - A 125-143-GHz frequency-reconfigurable BiCMOS compact LNA using a single RF-MEMS switch
ER  -