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  • New reliability mechanisms in memory design for sub-22nm technologies

     Aymerich, N.; Brown, A.; Canal, R.; Cheng, B.; Figueras, J.; Gonzalez, A.; Herrero, E.; Markov, S.; Miranda, M.; Pouyan, P.; Ramirez, T.; Rubio, A.; Vatajelu, I.; Vera, F.J.; Wang, W.; Zuber, P.; ASenov, A.
    IEEE International On-Line Testing Symposium
    p. 111-114
    DOI: 10.1109/IOLTS.2011.5993820
    Presentation of work at congresses
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